收藏本站
February 2007
FDB8447L
40V N-Channel PowerTrench ? MOSFET
40V, 50A, 8.5m ?
Features
Max r DS(on) = 8.5m ? at V GS = 10V, I D = 14A
Max r DS(on) = 11m ? at V GS = 4.5V, I D = 11A
Fast Switching
General Description
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench ? technology to
deliver low r DS(on) and optimized BV DSS capability to offer
superior performance benefit in the application.
RoHS Compliant
Application
Inverter
Power Supplies
D
D
G
G
S
TO-263AB
FDB Series
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25°C
Ratings
40
±20
50
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25°C
T A = 25°C
(Note 1)
(Note 1a)
66
15
A
-Pulsed
100
E AS
Drain-Source Avalanche Energy
(Note 3)
153
mJ
P D
T J , T STG
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
T C = 25°C
(Note 1a)
60
3.1
–55 to +150
W
° C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 1a)
2.1
40
°C/W
Package Marking and Ordering Information
Device Marking
FDB8447L
Device
FDB8447L
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
?2007 Fairchild Semiconductor Corporation
FDB8447L Rev.C
1
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDB8453LZ MOSFET N-CH 40V 16.1A TO-263AB
FDB86102LZ MOSFET N-CH 100V 30A D2PAK
FDB86135 MOSFET N-CH 100V D2PAK
FDB8832 MOSFET N-CH 30V 80A D2PAK
FDB8860_F085 MOSFET N-CH 30V 80A D2PAK
FDB8870_F085 MOSFET N-CH 30V 160A D2PAK
FDB8896 MOSFET N-CH 30V 93A TO-263AB
FDC2512_F095 MOSFET N-CH 150V 1.4A 6-SSOT
相关代理商/技术参数
FDB8453LZ 功能描述:MOSFET 40V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB86102LZ 功能描述:MOSFET 100V NCHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB86135 功能描述:MOSFET PWM PFC COMBO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8832 功能描述:MOSFET 30V N-CH Logic Level PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8832_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrench?? MOSFET 30V, 80A, 2.1m??
FDB8832_F085 功能描述:MOSFET 30V N-CHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8860 功能描述:MOSFET 30V N-Channel PwrTrch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8860_08 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrench㈢ MOSFET